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1) Identify what you thought was the one most important concept(s), method(s), and/or specific item that you felt was worthy of your understanding from the Key Terms on page 443.

2) Discuss in detail what the selected term means, how it is used and other pertinent information about the selected term including a specific example, application or case study from your own experience. Be specific; not vague or general.

3) Provide a detailed discussion of why you thought this selection is important and how it relates overall to resource management.

Your initial post should be based upon the assigned reading for the week, so the textbook should be the primary source listed in your reference section and cited within the body of the text. Other sources are not required but feel free to use them if they aid in your discussion.

Your initial post should be at least 450+ words and in APA format (including Times New Roman with font size 12 and double spaced). Post the actual body of your paper in the discussion thread then attach a Word version of the paper for APA review. Do not use lists or bullet points. This will result in substantial loss of points in the Substance section and the Requirements section.

+++it is not going to be more than one paragraph ++++++

Give your response to each situation.

1. 1) You are working for Bridger Photonics in Bozeman, Mt. While in Tokyo, Japan at a supplier of stepper motors you are given a gift of 3 silk ties that the company also manufactures (the company is an expert at motors and spinning devices. The manufacture of silk products requires spinning motion machines. The company leveraged their knowledge of motors into a horizontal market). The silk ties would be valued at $150 retail. The manufacturing cost of the ties was $5/tie. What do you do when you arrive back home in Bozeman?
2. 2) Chris is out to dinner with a friend who works for a small publicly held company in San Diego. His friend mentions to Chris that they are going to get bought by Google within a year if they complete a project they are working on. Chris’s friend is working on that key project and he told Chris that the project is looking really good and he thinks not only will it complete, but complete on time and under budget. Chris is currently looking to invest $10,000 that his grandmother left him in her will. The next day Chris buys $10,000 worth of his friends’ stock.
3. 3) Mary is working in a large company in the Bay Area. One day at work, Mary observes a colleague Sandra talking to another colleague who is a manager in the accounting department. Mary observes the manager rubbing Sandra’s arm and Sandra backing away from the person. What should Mary do?
4. 4) Ted and his family is visiting his brother in Whitefish, Mt. They are planning to go skiing. Ted’s brother offers to give him his season pass (Ted and his brother look very similar) so he doesn’t have to pay for a ski pass. Ted’s brother justified it saying, “I’ve paid for the year to ski and I’m not going up to the mountain tomorrow, you might as well use it.” What should Ted do?
5. 5) Bill had hail damage last summer and has recently completed the form to get more money. When Bill received the check from the insurance company, instead of $1,000 which he was expecting, the check was made out for $10,000. Bill cashed the check and put the money into his savings account. He decided to keep the money in his savings account for at least a year until he was sure the insurance company didn’t find the mistake. Then he would go buy that NRS raft with full fishing frame and trailer that he had been wanting but couldn’t afford. Bill figured the insurance company had plenty of money and he’d been paying insurance premiums for over 20 years and had never made one claim until this recent claim.

THIS LAB REQUIRES TO BE DONE IN MULTISIM

EE 310 Electronic Circuit Design I

Experiment 7

Introduction to the Transistor

Note:

The entirety of this lab is to be competed in Multisim.

Introduction

During the first half of the 20

th

century

electronic circuits were constructed with

vacuum tubes, essentially little glass bottles

with glowing filaments that were difficult to

miniaturize. Circuits consisted of a few, or

at most a few tens of tubes. Today, the

semiconductor revolution ha

s resulted in

displacement of the vacuum tube and in its

place we have integrated circuits that

contain

billions

of devices in a very small

area. All of this was made possible by the

invention of the transistor, a solid

-state

device that is constructed out

of common

materials like silicon. Inventors John

Bardeen (L), William Shockley (Seated),

and Walter Brattain (R) from Bell Labs

were awarded the Nobel Prize in Physics in

1956 for their revolutionary device, first

called the “Crystal Triode”.

Before la

unching off into the design of a

multi-billion transistor circuit, we need to

start with something more basic. Therefore,

in this lab experiment we will investigate

the characteristics of a single transistor used

in a basic type of circuit known as the

common

–

emitter

stage. Single device

transistor circuits are the building blocks of

circuit design and the common-emitter (CE)

stage is the most useful of the three basic

configurations. (Common -base and

common

-collector are the other two.)

Therefore it is i

mportant to have a clear

understanding of the common-emitter

configuration. We will be investigating both large

-signal and small

-signal features of the common emitter

stage, which are applicable to switching circuits and amplifying circuits, respectively.

The first transistor invented by the Bell Labs team was a

Point

Contact Transistor

made from a single crystal of n

-type

germanium. Many of today’s devices are

Bipolar Junction

Transistors

(BJT) made from silicon. They contain two different

types of semiconductor material, p

-type and n-type, and have two

pn junctions.

For this experiment we will be using a 2N3904 silicon npn

transistor

in multisim

. You can find it in Select a component >

BJT_NPN > 2N3904.

While the Bell Labs transistor was about 15 mm tall, the 2N3904

die

measures 0.43 by 0.33 mm, and is 0.23 mm thick. The package

is considerably larger, measuring 5 by 5 by 4 mm. Keep in mind

that

this is a relatively large device by today’s standards.

The First Transistor

2N3904 Die

Package

Pinout

The 2N3904 is a general

-purpose transistor having a fairly large breakdown voltage (

BV

CBO

and

BV

CEO

),

and it is appropriate for

amplifier applications. The device is not intended for fast logic because it has

relatively large capacitance and stores considerable charge when saturated.

To understand the device better, get a copy of its data sheet and study it carefully before starting the

experiment. If this is your first experience with the transistor, you will find many unfamiliar terms in a

transistor data sheet. As we progress through EE 310, many of these terms will become more familiar to

you.

When describing transistor

amplifiers we often simultaneously apply both DC (bias) and ac (signal)

voltages. Thus, the equations describing the voltages, currents, and powers in a transistor circuit contain

both DC and ac terms. In order to keep them sorted out, this lab exercise fo

llows the symbol convention

found in Sedra/Smith [1]. For example, the total instantaneous base

-emitter voltage

v

BE

is described by:

v

BE

=

V

BE

+

v

be

where

V

BE

is the DC bias term and

v

be

is the small

-signal ac term.

This experiment consists of three tasks, which are described on the pages that follow.

EE 310 Experiment 7

2

Experimental Procedure

1. Large

-Signal Voltage Transfer Characteristic

The purpose of this part of the experiment is to observe the large

-signal input

-output characteristics of a

typical common emitter stage. You should be aware that amplifiers and some other small

-signal

applications use only a portion of the resulting chara

cteristics

—namely, the region where the slope of the

v

CE

versus

v

BE

curve is steep. However, the rest of the characteristics are important to the proper operation

of logic circuits and switches. In these regions the output voltage is essentially independent of input

voltage variations. This feature permits the use of noisy inputs without altering the output state. It should

also be pointed out that large

-signal circuits, such as logic gates, must pass through the “small

-signal”

region whenever the output st

ate has to be changed. Therefore, designers of digital circuits cannot ignore

the small

-signal phenomena encountered in the linear region.

Refer to Fig. 1 for a schematic of the test circuit.

a.

Let

R

1

=

R

2

=

R

and let

R

3

=

R

/8.

b.

Choose a value for

R

to obtain a Thévenin equivalent resistance of 100 Ω for the base drive

circuit.

c.

Pick

R

C

= 10 kΩ.

d.

Set

V

DC

= 0 (replace it with a short

-circuit).

e.

Set

v

ac

to be a 20-V p

-p triangle wave at about 50 Hz.

V

CC

=+

15V

R

C

R

2

V

DC

2N3904

v

CE

~

v

ac

v

BE

R

3

Base drive circuit

Fig. 1

– Common Emitter Test Circuit

Observe both

v

BE

and

v

CE

simultaneously with the default 2 channel oscilloscope in multisim (Not

Tektronix oscilloscope)

. After you get the circuit running (

v

CE

will be a fluctuating voltage), switch the

oscilloscope to the

x

–

y

mode

(A/B button at the bot

tom left of the oscilloscope window in multisim.

If you cannot see this button, you are using the wrong oscilloscope!)

. Put

v

BE

on the

x

-channel and

v

CE

on the

y

-channel. The resulting display is a representation of the transfer characteristics of the CE stage.

Save a p

lot

your result and from the plot, determine the following:

f.

The active, cutoff, and saturation regions.

g.

The gain

dv

CE

/

dv

BE

when

v

CE

is near zero volts.

h.

The gain when

v

CE

is near its maximum value

i.

The gain when

v

CE

is in the middle of its range (

v

CE

=

V

CC

/2)

EE 310 Experiment 7

3

R

1

R

3

2. Large

-Signal Transient Response

The purpose of this task is to observe the transient response of the CE stage. Switch the

v

ac

signal source

(Default Function Generator in Multisim, not Agilent function generator)

from triangle to square

wave (at about 50 kHz) and let

V

DC

remain at zero. Set up the oscilloscope to simultaneously measure

both

v

ac

and

v

CE

in the time domain

(Y/T

button at the bottom left of the oscilloscope window in

multisim. If you cannot see this button, you are using the wrong oscilloscope!)

. Set

v

ac

to be just

large enough to drive

v

CE

from saturation to cutoff. Notice that the rise time is quite different from the

fall time. Plot your result, including a measurement of both the rise time and fall time of

v

CE

.

Slow rise time and fast fall time is ty

pical of the CE large

-signal transient response. Finite rise and fall

times are caused by circuit and device capacitances. Some of the capacitance comes from the BJT itself

and some of it comes from the wiring and any circuits tied to the load, including your oscilloscope probe.

The fall time is quite fast because there is an abundance of collector current available to quickly discharge

the load capacitance into the BJT and pull

v

CE

downward toward ground. However, the rise time is slower

because when the B

JT cuts off, the only source of current available to pull the collector voltage up is from

the resistor

R

C

. Since the resistor is usually quite large, it cannot rapidly charge the collector load parasitic

capacitance, so

v

CE

rises up rather slowly.

From y

our observed waveform, the knowledge that the 10–

90% rise time of a single-pole

RC

circuit

equals 2.2

RC

and the known value of

R

C

, calculate the total capacitance that is apparent at the collector

of the transistor.

3. Small

-signal Characteristics of a CE Stage

The purpose of this task of the experiment is to look more closely at the portion of the

v

BE

–

v

CE

characteristic where the slope is large. It is this region where it is possible to have large voltage gain.

This, of course, is very important in the design of small

-signal amplifier stages.

Small-signal Voltage Gain

The first choice that must be made i

s to decide exactly where to operate along the

v

BE

–

v

CE

curve. Two

factors are important:

•

Bipolar transistor current gain

β

is somewhat collector current dependent. We want to operate the

transistor near its optimum (maximum)

β

-value. Look up this paramete

r on the data sheet and find

the optimum collector bias current (at +25 °C, in this case).

•

The collector voltage excursions can be rather large. We want to avoid clipping at both

extremes of the output voltage swing. Therefore

it is logical to try to center the DC collector

voltage operating point

V

CE

near the middle of its range, that is, near

V

CC

/2. This may not be the

region where the large signal trace is steepest. However, we will use an overriding design goal

that the DC operating point be equal to

V

CC

/2.)

Therefore, select

R

C

so that the optimum dc collector current will flow when the dc collector voltage is

V

CC

/2. Then remove the short that had been placed across

V

DC

and install the variable DC power supply.

Adjust the base bias voltage

V

DC

until the DC collector voltage is close to

V

CC

/2. (The ac signal is to be

zero in this step.)

EE 310 Experiment 7

4

a.

Record your

R

C

value.

b.

Record the dc collector voltage measurement

V

CE

.

(Use

the default

multimeter in multisim

).

Set up the oscilloscope to display both

v

BE

and

v

CE

in the time domain

(Y/T button)

. Set the ac

function

generator

to a 1

-kHz triangle wave and gradually increase

v

ac

until the collector voltage begins to clip.

Try to get the collector voltage

v

CE

to barely clip at both extremes by making slight adjustments to both

V

DC

and

v

ac

. This clipping action will not be a “sharp

” transition. Instead as the transistor enters

saturation, you may observe a gradual distortion of the wave shape.

c.

Reduce the amplitude of the input signal so that the output signal has a 1-volt peak-to

-peak value.

Measure the “small

-signal” ac voltage gain, which is

v

ce

(the ac portion of

v

CE

) divided by

v

be

(the

ac portion of

v

BE

). Also plot your result (waveforms showing AC superimposed on DC values) for

this case.

Pre

-lab Assignment

•

Calculate the Thévenin equivalent circuit for the base drive source

in Fig. 1.

Let

R

1

=

R

2

=

R

and let

R

3

=

R

/8. Select the resistors to obtain a Thévenin resistance of 100 Ω.

(Use the closest standard resistance values.)

•

From the 2N3904 device characteristics determine the dc collector current that would give the

optimum (highest) common-emitter current gain,

β

(or

h

FE

). In this case, use the

+25 °C value.

•

Calculate the collector resistor

R

C

that will give a dc collector

bias voltage of

V

CC

/2, (where

V

CC

=

+15 V), and also result in the optimum dc collector current as determined in step 2) above.

•

A sufficiently large ac voltage applied to the base of the transistor will result in collector voltage

clipping at both

voltage extremes.

o

Explain what will cause clipping at the most positive excursion of the collector voltage.

o

Explain what will cause clipping at the least positive excursion of the collector voltage.

Note: This pre

-lab assignment is to be completed before the start of the

lab.

Please send a copy of your

answers to the leading TA(s)

of your lab section on CANVA

S.

Reporting Requirements

Note:

Attach a screenshot of your assembled circuit in multisim

to your report

along with screenshots

of

all oscilloscope plots and multimeter readings

while uploading to canvas. Compile everything in a single

pdf file if possible.

This is a one

-session experiment. Keep a record of all laboratory in your notebook. Make it descriptive

enough that another engineer would be able to duplicate your work. Be observant as you collect your

data to compare relative quantities and to draw conclusions about the specific properties of each

experiment. In the analysis section, develop relevant expressions and compare these calculated values

with the experimental results. Answer the questions posed in this laboratory assignment. Finally, include

a summary of the experiment in your concluding remarks, explaining what was learned and presenting

an overview of results.

EE 310 Experiment 7

5

Appendix

– 2N3904 Device Data Sheet

The latest version of the 2N3904 data sheet can be found at http://www.onsemi.com/

Reference

[1]

Adel S. Sedra, Kenneth C. Smith, Microelectronic Circuits, Oxford University Press, 7 edition (2014), ISBN

-13

978-

0199339136.

EE 310 Experiment 7

6

Instructions

Design a Comprehensive Learning and Development Leadership Program

As the executive learning and development director for a midsized global petroleum organization, you have been asked by the chief human resources officer (CHRO) to create a report on how you envision the design of a new leadership program for the organization’s 50 management and executives in leadership teams across four different departments:

Sales, Marketing, Finance, and Engineering.

These teams span three countries:

• United States
• Canada
• Mexico

In the report, please include the elements below:

1.Include an introductory paragraph with the name of your fictitious company, where the home office is located (you choose this), how long the company has been in business, and some background information. Do not use the name of or information about a real company.

2.Discuss your leadership development strategy, and give a vision to this strategy. For example, what are the outcomes of having a leadership development program for the organization?

3.Discuss how you plan to assess leadership capabilities.

4.Explain two to three assessment tools that you will use to identify leadership capabilities for each department.

5.Explain two to three leadership development methods for each department, taking into consideration cultures in each region—the United States, Canada, and Mexico.

6.Then, conclude your report by describing the benefits that a formal leadership development program will have on the organization. For example, explain why a leadership development program is important and how it enhances the organization’s competitiveness.

The completed scholarly activity must be at least two pages in length and include at least three outside sources, two of which must come from the Online Library see attached for resources. Adhere to APA guidelines when constructing this assignment, and include in-text citations and references for all sources that are used.

Please note that no abstract is needed.